Improved Performance and Reliability of p-i-n Perovskite Solar Cells via Doped Metal Oxides

摘要

Perovskite photovoltaics (PVs) have attracted attention because of theirexcellent power conversion efficiency (PCE). Critical issues related to largearea PV performance, reliability and lifetime need to be addressed. Here, weshow that doped metal oxides can provide ideal electron selectivity, improvedreliability and stability for perovskite PVs. We report p-i-n perovskite PVswith device areas ranging from 0.09cm2 to 0.5cm2 incorporating a thick aluminumdoped zinc oxide (AZO) electron selective contact with hysteresis-free PCE ofover 13% and high fill factor values in the range of 80%. AZO provides suitableenergy levels for carrier selectivity, neutralizes the presence of pinholes andprovides intimate interfaces. Devices using AZO exhibit an average PCE increaseof over 20% compared with the devices without AZO and maintain the high PCE forthe larger area devices reported. Furthermore, the device stability of p-i-nperovskite solar cells under the ISOS-D-1 is enhanced when AZO is used, andmaintains 100% of the initial PCE for over 1000 hours of exposure when AZO/Auis used as the top electrode. Our results indicate the importance of dopedmetal oxides as carrier selective contacts to achieve reliable and highperformance long lived large area perovskite solar cells.